Field effect transistor quartz crystal oscillator
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Field effect transistor quartz crystal oscillator
The circuit diagram of the field effect transistor quartz crystal oscillator is shown in the figure
The oscillator works in 51mhz (17mhz 3rd harmonic) crystal. According to the different structure, 0.5-1.8pf can be selected as the capacitance between drain and gate. L2 turns is about 20% of L1. The oscillation characteristics can be changed by 470 ohm source resistance.
① capacitance between poles. There are three interelectrode capacitances in FET, which are gate source capacitance CGS, gate drain capacitance CGD and source drain capacitance CDs. CGS and CGD are generally 1-3pf, and CDs are about 0.1-1pf
② maximum leakage current IDM.
It refers to the maximum current allowed to pass through the drain source of FET.
③ the dissipation power PD of FET.
It refers to the power dissipated when the FET works.
④ low frequency noise coefficient NF.
The noise of FET is caused by the irregularity of carrier motion. Its existence will make an amplifier even if there is no signal input, there will be irregular changes in the output voltage or current. The low frequency noise coefficient of FET is smaller than that of semiconductor triode.