Development of transistors

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Development of transistors

1) Vacuum triode

In February 1939, Bell Labs had a great discovery, the birth of silicon p_n junction. In 1942, a student named Seymour Benzer from a group led by Purdue University Lark_Horovitz found that germanium single crystals have excellent rectifying properties not found in other semiconductors. These two findings met the requirements of the US government and laid the groundwork for the subsequent invention of transistors.

2) Point contact transistor

At the end of World War II in 1945, the point contact transistors invented by Shockley and others became the forerunners of the human microelectronics revolution. To this end, Shockley submitted a patent for the first transistor for Bell. In the end, I was awarded the authorization for the first transistor patent.

3) Bipolar and unipolar transistors

Based on bipolar transistors, Shockley further proposed the concept of a unipolar junction transistor in 1952, the junction transistor described today. The structure is similar to that of a pnp or npn bipolar transistor, but there is a depletion layer at the interface of the p_n material to form a rectifying contact between the gate and the source-drain conductive channel. The semiconductor at both ends serves as a gate. Adjust the current between the source and drain through the gate

4) Silicon transistor

Fairchild Semiconductor has grown from a company of several people to a large company with 12,000 employees.

5) Integrated circuit

After the invention of silicon transistors in 1954, the huge application prospects of transistors have become more and more obvious. The next goal of scientists is how to further efficiently connect transistors, wires and other devices.

6) Field effect transistor and MOS tube

In 1961, the birth of the MOS tube. In 1962, Stanley, Heiman, and Hofstein, who worked on the RCA device integration research group, discovered that transistors can be constructed by diffusion and thermal oxidation of conductive strips, high-resistance channel regions, and oxide layer insulating layers formed on Si substrates. Tube [ .