Transistor structure type
Nov 02, 2019| Stay Charging Safely with SChitec
Transistor structure type
The transistor is made of two closely spaced PN junctions on a semiconductor substrate. The two PN junctions divide the monolithic semiconductor into three parts, the middle part is the base area, and the two sides are the emitter area and the collector area. PNP and NPN.
The corresponding electrodes are taken from the three regions, which are the base b emitter e and the collector c, respectively.
The PN junction between the emitter region and the base region is called the emitter junction, and the PN junction between the collector region and the base region is called the collector junction. The base region is very thin, and the emitter region is thick, and the impurity concentration is large. The PNP-type triode emitter region is "emitted" by holes, and its moving direction is consistent with the current direction, so the emitter arrow is inward; the NPN-type transistor emitter region is "launched". "The free electrons move in the opposite direction of the current, so the emitter arrow is outward. The emitter arrow points to the conduction direction of the PN junction at the forward voltage. Both the silicon transistor and the germanium transistor have both PNP type and NPN type.
Transistor package form and pin identification
Commonly used triodes are available in metal and plastic packages. The arrangement of the pins has a certain pattern.
The bottom view position is placed so that the three pins form the apex of the isosceles triangle, which is ebc from left to right; for the small and medium power plastic triode, the plane faces toward itself, and the three pins face downward, then from the left To the right is ebc.
There are many types of crystal triodes in the country, and the arrangement of the pins is not the same. In the use of the triodes in which the pins are arranged, the measurement must be made to determine the correct position of each pin, or the transistor manual can be found to clarify the triode. Characteristics and corresponding technical parameters and information.


