Single electron transistor

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Single electron transistor

A transistor that can record a signal with one or a small amount of electrons. With the development of semiconductor etching technology and processes, the integration of large-scale integrated circuits is getting higher and higher. In the case of dynamic random access memory (DRAM), its integration is almost four times faster every two years. It is expected that single-electron transistors will be the ultimate goal. At present, the general memory contains 200,000 electrons per memory cell, and the single-electron transistor contains only one or a small amount of electrons per memory cell, so it will greatly reduce power consumption and improve integration of integrated circuits. In 1989, J.H.F.Scott-Thomas et al. experimentally found Coulomb blockage. On the two-dimensional electron gas formed by the interface of the doped heterojunction, a metal electrode with a small area is formed, so that a quantum dot is formed in the two-dimensional electron gas, which can only accommodate a small amount of electrons, that is, its capacitance. Very small, less than one? F (10~15 Farah). When a voltage is applied, if the voltage change causes the charge change in the quantum dot to be less than one electron charge, no current will pass. Current does not pass until the voltage increases to cause a change in electron charge. Therefore, the current-voltage relationship is not a normal linear relationship but a stepped shape. For the first time in history, this experiment achieved the manual control of an electron's motion, providing an experimental basis for the manufacture of single-electron transistors. In order to improve the operating temperature of single-electron transistors, the size of quantum dots must be less than 10 nanometers. At present, various laboratories around the world are thinking of various ways to solve this problem. Some laboratories claim to have produced single-electron transistors that operate at room temperature, observing the stepped current-voltage curve formed by electron transport, but at a considerable distance from practical use.