Power transistor and photo transistor

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Power transistor and photo transistor 

The power transistor is literally translated into a giant transistor by the English Giant Transistor. It is a Bipolar Junction Transistor (BJT) that is resistant to high voltage and high current, so it is sometimes called Power BJT. Its characteristics are: high withstand voltage. The current is large, the switching characteristics are good, but the driving circuit is complicated and the driving power is large; the working principle of the GTR and the ordinary bipolar junction transistor is the same.

Phototransistor

A phototransistor is a photovoltaic device composed of a three-terminal device such as a bipolar transistor or a field effect transistor. Light is absorbed in the active region of such devices, producing photo-generated carriers that produce photocurrent gain through an internal electrical amplification mechanism. The phototransistor operates at the three ends, so it is easy to achieve electronic control or electrical synchronization. The material used for phototransistors is usually gallium arsenide (GaAs), which is mainly divided into bipolar phototransistors, field effect phototransistors and related devices. Bipolar phototransistors typically have high gains but are not very fast. For GaAs-GaAlAs, the amplification factor can be greater than 1000 and the response time is greater than nanoseconds. It is commonly used in photodetectors and in optical amplification. The field effect phototransistor has a fast response speed (about 50 picoseconds), but the disadvantage is that the photosensitive area is small and the gain is small (the amplification factor can be greater than 10), which is often used as a very high speed photodetector. Along with this, there are many other planar optoelectronic devices that are characterized by fast speed (response time of tens of picoseconds) and are suitable for integration. Such devices are expected to find application in optoelectronic integration.