Field effect transistor
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Field effect transistor
The meaning of "field effect" is that the working principle of this transistor is based on the electric field effect of the semiconductor.
Field effect transistor A transistor that operates on the principle of field effect. Field effect transistors in turn contain two main types: Junction FETs (JFETs) and Metal-Oxide Semiconductor FETs (MOS-FETs). Unlike BJT, FETs are only electrically conductive by one type of carrier (majority carriers) and are therefore also referred to as unipolar transistors. It belongs to a voltage-controlled semiconductor device and has the advantages of high input resistance, low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown, and wide safe working area.
The field effect is to change the direction or magnitude of the applied electric field perpendicular to the surface of the semiconductor to control the density or type of majority carriers in the semiconductor conductive layer (channel). It is a voltage-modulated current in the channel whose operating current is transported by majority carriers in the semiconductor. Such a transistor in which only one type of polar carrier participates in conduction is also called a unipolar transistor. Compared with bipolar transistors, field effect transistors have the characteristics of high input impedance, low noise, high limit frequency, low power consumption, simple manufacturing process and good temperature characteristics. They are widely used in various amplifier circuits, digital circuits and microwave circuits. Wait. Silicon-based metal 0-oxide-semiconductor field effect transistors (MOSFETs) and gallium arsenide-based Schottky barrier field effect transistors (MESFETs) are the two most important field effect transistors. They are the basic devices of MOS LSI and MES ultra-high-speed integrated circuits.