Collector - collector reverse breakdown voltage
Nov 05, 2019| Stay Charging Safely with SChitec
Collector - collector reverse breakdown voltage
This voltage is the maximum allowable reverse voltage between the collector and the emitter when the transistor is open, generally indicated by VCEO or BVCEO.
Base - base reverse breakdown voltage
This voltage is the maximum allowable reverse voltage between the collector and the base when the emitter of the transistor is open, expressed in VCBO or BVCBO.
Emitter-emitter reverse breakdown voltage
This voltage is the maximum allowable reverse voltage between the emitter and the base when the collector of the transistor is open, as indicated by VEBO or BVEBO.
Collector - reverse current ICBO between bases
ICBO is also called collector junction reverse leakage current, which refers to the reverse current between the collector and the base when the emitter of the transistor is open. ICBO is sensitive to temperature, and the smaller the value, the better the temperature characteristics of the transistor.
Collector - Reverse breakdown current between emitters ICEO ICEO refers to the reverse leakage current between the collector and emitter when the base of the transistor is open, also known as the penetration current. The smaller the current value, the better the performance of the transistor.


